Electroforming, magnetic and resistive switching in MgO-based tunnel junctions

• Tipo: Artigo em Revista Científica Internacional
• Data: 2009

Autores

teixeira, j. m. (Autor) Outra; ventura, j. (Autor) FCUP; fermento, r. (Autor) Outra; araujo, j. p. (Autor) FCUP; sousa, j. b. (Autor) FCUP; wisniowski, p. (Autor) Outra; freitas, p. p. (Autor) Outra

Revista

Título: Journal of Physics D: Applied Physics

Vol. 42

Página Final: 105407

ISSN: 0022-3727

Editora: Institute of Physics Publishing

Indexação

ISI Web of Knowledge - 39 Citações

Scopus - 40 Citações

Outras Informações

ID Authenticus: P-003-K1X

DOI: 10.1088/0022-3727/42/10/105407

Abstract (EN): Magnetic tunnel junctions (MTJs) are under investigation since they offer great potential for applications in magnetic memories. An interesting effect in TJs concerns non-volatile resistive switching of non-magnetic origin. We report magnetic (magnetoresistance) and structural (resistive; R) switching in MgO-based MTJs (barrier thicknesses t = 0.75, 1.35 nm). As-grown MTJs display R-switching only in the thinnest series, while thicker barrier samples need an electroforming step for R-switching to occur. Forming changes the electrical resistance temperature dependence, from tunnel-to metallic-like, revealing the formation of conductive bridges across the barrier which, leading to local high electrical fields and temperatures, are essential for resistive switching.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4