Tunneling processes in thin MgO magnetic junctions

• Tipo: Artigo em Revista Científica Internacional
• Data: 2010

Autores

teixeira, j. m. (Autor) REIT; ventura, j. (Autor) FCUP; araujo, j. p. (Autor) FCUP; sousa, j. b. (Autor) FCUP; wisniowski, p. (Autor) Outra; freitas, p. p. (Autor) Outra

Revista

Título: Applied Physics Letters

Vol. 96 Nº 4

Página Final: 262506

ISSN: 0003-6951

Editora: American Institute of Physics

Indexação

ISI Web of Knowledge - 17 Citações

Scopus - 17 Citações

Outras Informações

ID Authenticus: P-003-5M1

DOI: 10.1063/1.3458701

Abstract (EN): Magnetic tunnel junctions (MTJs) with MgO barriers are used in a variety of applications, from read heads to novel microwave devices. In this work, we probed the temperature (T) dependence of the electrical transport of sputtered CoFeB/MgO/CoFeB MTJs with different barrier thicknesses (t(b)=0.75-1.35 nm). We show evidence that spin-polarized direct elastic tunneling is the dominant mechanism determining the T-dependence of the tunnel conductance (G) and magnetoresistance for t(b)>= 0.85 nm. Also, the electronic thermal smearing near the Fermi level plays a key role in G(T). We observe the onset of pinholes for MTJs with 0.75 nm of MgO, with a transition to metallic-like transport. (C) 2010 American Institute of Physics. [doi:10.1063/1.3458701]

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 3