Resistive switching and activity-dependent modifications in Ni-doped graphene oxide thin films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2012

Autores

Pinto, S (Autor) Outra; Krishna, R (Autor) Outra; Dias, C (Autor) Outra; Pimentel, G (Autor) Outra; Oliveira, GNP (Autor) Outra; Teixeira, JM (Autor) FCUP; Aguiar, P (Autor) FCUP; Titus, E (Autor) Outra; Gracio, J (Autor) Outra; Ventura, J (Autor) REIT; Araujo, JP (Autor) FCUP

Revista

Título: Applied Physics Letters

Vol. 101

Página Final: 063104

ISSN: 0003-6951

Editora: American Institute of Physics

Indexação

ISI Web of Knowledge - 31 Citações

Scopus - 34 Citações

Classificação Científica

FOS: Ciências exactas e naturais > Física

Outras Informações

ID Authenticus: P-002-6ZX

DOI: 10.1063/1.4742912

Abstract (EN): The resistive switching (RS) mechanism in Ni-doped graphene oxide (GO) devices is studied. We found that RS depends strongly on the fabrication method of the GO sheet and on the electrode material. Resistive switching in GO-devices can be caused by the diffusion of ions from metallic electrode or by the migration of oxygen groups, depending on the fabrication process. We also show that GO-based structures possess activity-dependent modification capabilities, emphasized by the increase/decrease of device conductance after consecutive voltage sweeps of opposite polarity. Our results allow a better understanding of bipolar RS, towards future non-volatile memories and neuromorphic systems. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742912]

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4