Power Bipolar Transistor Modeling Using SPICE. Proceedings of the Third Portuguese Conference on Automatic Control, Controlo98, Coimbra, September,1998.

• Tipo: Artigo em Livro de Atas de Conferência Internacional
• Data: 1998

Autores

Armando Araújo (Autor) FEUP; Jorge Martins de Carvalho (Autor) FEUP; Adriano Carvalho (Autor) FEUP

Ata de Conferência Internacional

Título: Proceedings 3rd Portuguese Conf. on Automatic Controlo

3rd Portuguese Conf. on Automatic Controlo¿98

Coimbra

Outras Informações

Abstract (EN): A physics based model for the Power Bipolar Junction Transistor-PBJT- is implemented into the general circuit simulation package SPICE. This model, based on a variational formulation and finite element (FE) solution of the Drift-Diffusion and Poisson equations, in the low doped zone of the semiconductor, accurately describes turn-on, turn-off and conduction behaviors. The procedure used to implement the resulting model into SPICE is described. SPICE simulations are finally compared with known experiments for demonstration of its effectiveness.

Idioma: Português

Tipo (Avaliação Docente): Científica

Nº de páginas: 6