In situ TEM study of grain growth in nanocrystalline copper thin films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2010

Autores

Simoes, S (Autor) FEUP; Calinas, R (Autor) Outra; Vieira, MT (Autor) Outra; Vieira, MF (Autor) FEUP; Ferreira, PJ (Autor) Outra

Revista

Título: Nanotechnology

Vol. 21 Nº 30

Página Final: 145701

ISSN: 0957-4484

Editora: Institute of Physics Publishing

Indexação

ISI Web of Knowledge - 106 Citações

ISI Web of Science

Scopus - 107 Citações

COMPENDEX

INSPEC

Classificação Científica

FOS: Ciências da engenharia e tecnologias > Engenharia dos materiais

Outras Informações

ID Authenticus: P-003-7HK

DOI: 10.1088/0957-4484/21/14/145701

Abstract (EN): Nanocrystalline metals demonstrate a range of fascinating properties, including high levels of mechanical strength. However, as these materials are exposed to high temperatures, it is critical to determine the grain size evolution, as this process can drastically change the mechanical properties. In this work, nanocrystalline sputtered Cu thin films with 43 +/- 2 nm grain size were produced by dc-magnetron sputtering. Specimens were subsequently annealed in situ in a transmission electron microscope at 100, 300 and 500 degrees C. Not only was grain growth more evident at 500 degrees C but also the fraction of twins found. An analysis of grain growth kinetics revealed a time exponent of 3 and activation energy of 35 kJ mol(-1). This value is explained by the high energy stored in the form of dislocation, grain boundaries and twin boundaries existing in nanocrystalline copper, as well as the high probability for atoms to move across grains in nanocrystalline materials.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 12