A FEM punch-through IGBT model using an efficient parameter extraction method

• Tipo: Artigo em Livro de Atas de Conferência Internacional
• Data: 2005

Autores

Rui Chibante (Autor) Outra; Armando Araújo (Autor) FEUP; Adriano Carvalho (Autor) FEUP

Ata de Conferência Internacional

Título: IECON 2005: THIRTY-FIRST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-3

Páginas: 679-684

31st Annual Conference of the IEEE-Industrial-Electronics-Society

Raleigh, NC, NOV 06-10, 2005-2006

Indexação

ISI Web of Knowledge - 0 Citações

Scopus - 4 Citações

INSPEC

Classificação Científica

FOS: Ciências da engenharia e tecnologias > Engenharia electrotécnica, electrónica e informática

CORDIS: Ciências Tecnológicas > Engenharia > Engenharia electrotécnica

Outras Informações

ID Authenticus: P-000-5W9

DOI: 10.1109/iecon.2005.1568986

Abstract (EN): A Finite Element physics-based punch-through IGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 6