Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix

• Tipo: Artigo em Revista Científica Internacional
• Data: 2012

Autores

Pinto, SRC (Autor) Outra; Buljan, M (Autor) Outra; Marques, L (Autor) Outra; Martin Sanchez, J (Autor) Outra; Conde, O (Autor) Outra; Chahboun, A (Autor) Outra; Ramos, AR (Autor) Outra; Barradas, NP (Autor) Outra; Alves, E (Autor) Outra; Bernstorff, S (Autor) Outra; Grenzer, J (Autor) Outra; Muecklich, A (Autor) Outra; Ramos, MMD (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Nanotechnology

Vol. 23

ISSN: 0957-4484

Editora: Institute of Physics Publishing

Indexação

ISI Web of Knowledge - 7 Citações

Scopus - 9 Citações

Outras Informações

ID Authenticus: P-002-4FS

DOI: 10.1088/0957-4484/23/40/405605

Abstract (EN): In this work, the influence of air pressure during the annealing of Ge quantum dot (QD) lattices embedded in an amorphous Al2O3 matrix on the structural, morphological and compositional properties of the film is studied. The formation of a regularly ordered void lattice after performing a thermal annealing process is explored. Our results show that both the Ge desorption from the film and the regular ordering of the QDs are very sensitive to the annealing parameters. The conditions for the formation of a void lattice, a crystalline Ge QD lattice and a disordered QD lattice are presented. The observed effects are explained in terms of oxygen interaction with the Ge present in the film.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 9