Band gap and band tailing behaviour of PLZT films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2007

Autores

Khodorov, A (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Ferroelectrics

Vol. 360

Páginas: 153-158

ISSN: 0015-0193

Editora: Taylor & Francis

Indexação

ISI Web of Knowledge - 0 Citações

Scopus - 0 Citações

Outras Informações

ID Authenticus: P-004-D4X

DOI: 10.1080/00150190701515956

Abstract (EN): Lanthanum modified lead zirconate titanate (PLZT) thin films were fabricated on sapphire (0001) substrate by sol-gel method. The cell parameters of films were calculated with help of whole pattern fitting procedure. The study of optical properties revealed the fractal behaviour of absorption coefficient near the absorption edge. The strong shift of the absorption edge in thin films in comparison with bulk PLZT was observed. This shift could not be caused just by the presence of the strain. The increased disorder and polarization fluctuations were suggested as the additional reason that was supported by nearly twice higher value of the exponential tail width in the films in comparison with bulk PLZT.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 6