Structural and photoelectrical properties of Nb-doped PZT thin films deposited by pulsed laser ablation

• Tipo: Artigo em Revista Científica Internacional
• Data: 2004

Autores

Boerasu, I (Autor) Outra; Pereira, M (Autor) Outra; Gomes, MJM (Autor) Outra; Watts, B (Autor) Outra; Leccabue, F (Autor) Outra; Vilarinho, PM (Autor) Outra

Revista

Título: Journal of the European Ceramic Society

Vol. 24

Páginas: 1633-1636

ISSN: 0955-2219

Editora: Elsevier

Indexação

ISI Web of Knowledge - 3 Citações

Scopus - 2 Citações

Outras Informações

ID Authenticus: P-000-D4N

DOI: 10.1016/s0955-2219(03)00403-5

Abstract (EN): Sintered targets of Nb5+ doped PZT (65/35) (rhombohedral phase) were used in a pulsed laser deposition process to produce, in a single step, highly oriented ferroelectric thin films onto Pt (111)/TiO2/SiO2/Si substrates for electrical applications. The doping influence of 1% mol Nb on the crystalline phase formation and the resulting ferroelectrical and photoelectrical properties of the deposited films were investigated. The characterization was performed using X-ray diffraction, P-E hysteresis loop and photoelectric measurements. Maintaining the same composition PZTN (65/35/1), a comparison with bulk materials and thin films produced by sol-gel technique is also performed. The presented results give some indications about a possible existence of a "dead-layer" in the as-deposited films.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4