Raman and XRD studies of Ge nanocrystals in alumina films grown by RF-magnetron sputtering

• Tipo: Artigo em Revista Científica Internacional
• Data: 2008

Autores

Caldelas, R (Autor) Outra; Rolo, AG (Autor) Outra; Gomes, MJM (Autor) Outra; Alves, E (Autor) Outra; Ramos, AR (Autor) Outra; Conde, O (Autor) Outra; Yerci, S (Autor) Outra; Turan, R (Autor) Outra

Revista

Título: Vacuum

Vol. 82

Páginas: 1466-1469

ISSN: 0042-207X

Editora: Elsevier

Indexação

ISI Web of Knowledge - 22 Citações

Scopus - 25 Citações

Outras Informações

ID Authenticus: P-003-X2K

DOI: 10.1016/j.vacuum.2008.03.067

Abstract (EN): Germanium (Ge) nanocrystals (NCs) embedded in alumina thin films were produced by deposition on fused silica and silicon (111) substrates using radio-frequency (RF) magnetron sputtering. The films were characterised by both Raman and X-ray diffraction (XRD) spectroscopy. The deposition conditions were optimised in order to obtain crystalline Ge nanoparticles. In as-deposited films, the typical NC size was similar to 3 nm as estimated by means of X-ray diffraction. Raman spectra taken from as-deposited films revealed both amorphous and crystalline semiconductor phases. Annealing was performed in order to improve the crystallinity of the semiconductor phase in the films. After a 1 h annealing at 800 degrees C the mean NC size estimated from the XRD data and Raman spectra increased to similar to 6.5 nm. An increase in the crystallinity of the Ge phase was also confirmed by the Raman spectroscopy data.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4