Structural evolution of PZTN thin films produced by pulsed laser ablation deposition

• Tipo: Artigo em Revista Científica Internacional
• Data: 2008

Autores

Pereira, M (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Vacuum

Vol. 82

Páginas: 1375-1378

ISSN: 0042-207X

Editora: Elsevier

Indexação

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Outras Informações

ID Authenticus: P-003-X28

DOI: 10.1016/j.vacuum.2008.03.037

Abstract (EN): The study of highly oriented Nb-doped PZT thin films deposited by laser ablation on n-type (111) Si substrates is reported. Sintered ceramics based on the nominal composition Pb-0.995(Zr0.65Ti0.35)(0.99)Nb0.01O3 (PZTN) with an excess of PbO were used as targets. The films were deposited using the 3rd harmonic (355 nm) of a pulsed Nd:YAG laser (7 ns pulse duration) with 7 J/cm(2) fluence, at different oxygen pressures (from 10(-1) to 10(-4) mbar) and at a vacuum of 10(-6) mbar. The substrate temperature was varied in the range of 500-600 degrees C. In optimized conditions, the as-deposited PZT-based films show perovskite structure oriented along the (110) direction with minor impurities (PbO), as revealed from X-ray diffraction spectra. Further, microstructural analysis of the as-grown including chemical composition is also presented. The relationship between cornposition of the target, deposition conditions and film properties are then discussed.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4