Temperature dependence of photoluminescence from CdSe nanocrystals embedded in silica matrix

• Tipo: Artigo em Revista Científica Internacional
• Data: 2009

Autores

Chahboun, A (Autor) Outra; Levichev, S (Autor) Outra; Rolo, AG (Autor) Outra; Conde, O (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Journal of Luminescence

Vol. 129

Páginas: 1235-1238

ISSN: 0022-2313

Editora: Elsevier

Indexação

ISI Web of Knowledge - 2 Citações

Scopus - 2 Citações

Outras Informações

ID Authenticus: P-003-FF7

DOI: 10.1016/j.jlumin.2009.06.007

Abstract (EN): In this work, CdSe nanocrystals (NCs) embedded in SiO2 matrix were grown by radio frequency (RF)sputtering technique. X-ray technique was used to characterise the structural properties of the system. The NC's size was estimated to be around 4 +/- 1 nm in diameter. The temperature dependence of the photoluminescence from the CdSe/SiO2 System showed carriers thermal exchange between the NCs and deep defects in the matrix. The evolution of the excitonic energy emission with temperature is about 10 meV in the temperature range 15-295 K. This weak shift was explained by thermal mismatch between the matrix and the NCs.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4