Structure and dielectric properties of sol-gel 9/65/35 PLZT thin films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2005

Autores

Khodorov, A (Autor) Outra; Pereira, M (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Journal of the European Ceramic Society

Vol. 25

Páginas: 2285-2288

ISSN: 0955-2219

Editora: Elsevier

Indexação

ISI Web of Knowledge - 14 Citações

Scopus - 15 Citações

Outras Informações

ID Authenticus: P-000-64T

DOI: 10.1016/j.jeurceramsoc.2005.03.047

Abstract (EN): Ferroelectric lead lanthanum zirconate titanate thin films were prepared by a sol-gel method on Pu(1 1 1)/TiO2/SiO2/Si substrate. The texture selection was observed to be very sensitive to the preparation routine and samples with different preferred orientation were produced. The large- or fine-grained microstructure was observed depending on film thickness. The dielectric measurements of 360 nm thick film performed in the frequency window 10 Hz divided by 2 MHz revealed the typical relaxor behaviour. The strong dispersion of dielectric permittivity was observed and the temperature shift of maximum of imaginary part of dielectric permittivity with measured frequency was fitted well with the Vogel-Fulcher law.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4