Fundamental absorption edge and near-absorption edge properties of PLZT thin films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2009

Autores

Khodorov, A (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Physica Status Solidi (A) Applications and Materials

Vol. 206

Páginas: 2576-2580

ISSN: 1862-6300

Editora: Wiley-Blackwell

Indexação

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Outras Informações

ID Authenticus: P-003-EW0

DOI: 10.1002/pssa.200824324

Abstract (EN): Lanthanum-doped lead zirconate titanate (PLZT) thin films were fabricated by sol-gel, as well as, pulsed-laser deposition methods on sapphire (0001) and MgO (100) substrates, respectively. The cell parameters of the films were calculated with the help of a whole-pattern fitting procedure. The study of their optical properties revealed the fractal behavior of the absorption coefficient near the absorption edge (E-g). For laser-ablated and sol-gel-derived films, E-g was estimated to be 3.61 and 3.65 eV, respectively. This shift of E-g was suggested to relate to a difference in strain values and the volume-deformation potential was estimated to be -2.4 eV. The strong shift of E-g in the thin films in comparison to bulk PLZT was also observed. This shift could not only be attributed to the presence of strain, but could also be due to increased disorder and polarization fluctuations. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 5