The influence of argon pressure and RF power on the growth of InP thin films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2011

Autores

Chandra, GH (Autor) Outra; Perez P de la Cruz (Autor) FCUP; ventura, j. (Autor) REIT

Revista

Título: Semiconductor Science and Technology

Vol. 26

ISSN: 0268-1242

Editora: Institute of Physics Publishing

Indexação

ISI Web of Knowledge - 8 Citações

Scopus - 8 Citações

Outras Informações

ID Authenticus: P-002-PQX

DOI: 10.1088/0268-1242/26/7/075017

Abstract (EN): Indium phosphide thin films were grown onto glass substrates by RF magnetron sputtering. In this paper, we present a study on the role of argon pressure and rf power on magnetron sputtered InP films. These sputtering parameters are shown to affect the deposition rate, structure, morphology, electrical and optical properties of InP films. Single-phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (1 1 1) were observed at an argon pressure of 0.4 Pa, by keeping the substrate temperature (448 K) and RF power (150 W) constant. Hall measurements indicated n-type conductivity in InP films. The optical absorption studies indicated a direct band gap of 1.35 eV.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 8