Modeling buffer layer IGBTs with an efficient parameter extraction method

• Tipo: Artigo em Livro de Atas de Conferência Internacional
• Data: 2005

Autores

Rui Chibante (Autor) Outra; Armando Araújo (Autor) FEUP; Adriano Carvalho (Autor) FEUP

Ata de Conferência Internacional

Título: 2005 IEEE 36th Power Electronic Specialists Conference (PESC), Vols 1-3

Páginas: 2194-2200

36th Annual IEEE Power Electronic Specialists Conference (PESC 05)

Recife, BRAZIL, JUN 12-16, 2005

Indexação

ISI Web of Knowledge - 8 Citações

Scopus - 11 Citações

INSPEC

Classificação Científica

FOS: Ciências da engenharia e tecnologias > Engenharia do ambiente

CORDIS: Ciências Tecnológicas > Engenharia > Engenharia electrotécnica

Outras Informações

ID Authenticus: P-000-70D

DOI: 10.1109/pesc.2005.1581937

Abstract (EN): A Finite Element physics-based punch-through IGBT model is presented, as well as its porting into standard circuit simulator SPICE. Developed model is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier distribution is obtained. Implementing the model in a circuit simulator is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using conventional methods. The paper also discusses a parameter extraction procedure using an optimisation algorithm in order to get an efficient extraction of large number of parameters needed for physics-based IGBT models. Model is validated comparing experimental and simulated results.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 7