A new physics based SPICE sub-circuit model for insulated gate bipolar transistors (IGBTs)

• Tipo: Artigo em Livro de Atas de Conferência Internacional
• Data: 2003

Autores

Rui Filipe Marques Chibante (Autor) FEUP; Armando Luís Sousa Araújo (Autor) FEUP; Adriano da Silva Carvalho (Autor) FEUP

Ata de Conferência Internacional

Título: Proceedings of the EPE 2003

Páginas: 1-10

10th EPE Conference (EPE 2003)

Toulouse, France, September 2-4, 2003

Classificação Científica

FOS: Ciências da engenharia e tecnologias > Engenharia electrotécnica, electrónica e informática

CORDIS: Ciências Tecnológicas > Engenharia > Engenharia electrotécnica

Outras Informações

Abstract (EN): The paper describes SPICE simulator implementation of a new, physics based, Finite Element Method (FEM) model for semiconductor simulation. The method is based on unidimensional approach that associates each zone of the semiconductor to a sub-circuit capable of implementation, in any general circuit simulator (such as SPICE), in a modular mode. After identification of these zones they are just modelled using subcircuits, which emulate their behaviour. Final model is made connecting them through boundary conditions. Modelling a semiconductor starts with identification of the different zones that constitute the device, such as, low doped, high doped and ohmic zones, narrow bases, and junction and space charge zones. For large and lightly doped zones electron/hole time/space distribution (ambipolar diffusion equation (ADE) solution in space/time) is found solving ADE with the Finite Element Method (FEM). Highly doped emitters as recombination sinks using h parameters. Ohmic zones are modelled with the knowledge of time/space carrier concentration. Models for narrow bases uses charge control principles. Junction and space charge drops models uses, respectively, a Boltzmann approach and Poisson equation.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 12