OPTIMUM SWITCHING IN IGBT TRANSISTOR

• Tipo: Artigo em Livro de Atas de Conferência Internacional
• Data: 1994

Autores

QUINTAS, AR (Autor) Outra; CARVALHO, A (Autor) FEUP; ARAUJO, A (Autor) FEUP; MARTINS, A (Autor) FEUP

Ata de Conferência Internacional

Título: 7TH MEDITERRANEAN ELECTROTECHNICAL CONFERENCE, VOLS 1-3

Páginas: 568-570

7th Mediterranean Electrotechnical Conference (MeleCON 94)

ANTALYA, TURKEY, APR 12-14, 1994

Indexação

ISI Web of Knowledge - 0 Citações

Scopus - 3 Citações

Classificação Científica

FOS: Ciências da engenharia e tecnologias > Engenharia electrotécnica, electrónica e informática

Outras Informações

ID Authenticus: P-001-M7W

Resumo (PT): The generalized industrial application of high power transistor based converters requires the implementation of transistor drive circuits capable of working without additional floating power supplies and satisfying a set of requirements imposed by the industrial end users. Th paper presents the design, implementation and experimental results of an IGBT gate drive circuit fulfilling all these requirements. The gate circuit described below uses two small, commercially available, pulse transformers, combined with a high frequency modulation of the control signal and the intrinsic input capacitor of the power switch. The energy level needed during the commutations, of the 300A 1000V IGBTs used in the application, is obtained through additional first pulse width modulation. This drive circuit is currently being used in industrial three phase PWM voltage inverters.

Abstract (EN): The generalised industrial application of high power transistor based converters requires the implementation of transistor drive circuits capable of working without additional floating power supplies and satisfying a set of requirements imposed by the industrial end users. The paper presents the design, implementation and experimental results of an IGBT gate drive circuit fulfilling all these requirements. The gate circuit described below uses two small, commercially available, pulse transformers, combined with a high frequency modulation of the control signal and the intrinsic input capacitor of the power switch. The high energy level needed during the commutations, of the 300 A 1000 V IGBTs used in the application, is obtained through additional first pulse width modulation. This drive circuit is currently being used in industrial three phase PWM voltage inverters.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 3