Using Finite Element Methods for the Modeling of Semiconductor Power Bipolar Devices

• Tipo: Artigo em Livro de Atas de Conferência Internacional
• Data: 1996

Autores

Armando Araújo (Autor) FEUP; Adriano Carvalho (Autor) FEUP; Jorge Martins de Carvalho (Autor) FEUP

Ata de Conferência Internacional

Título: Seminário Anual de Automação e Electrónica Indústria

Páginas: 762-766

Seminário Anual de Automação e Electrónica Indústria

Saragoça, Espanha

Outras Informações

Resumo (PT): This paper presents a method for the solution of the Ambipolar Diffusion Equation (ADE) with a Finite Element (FE) approach. The method enables the representation of the base region of power bipolar devices as combination of elementary two port networks with parameters that can vary in time and space. This allows the solution of this equation through an equivalent electrical network. The method can be implemented into any electrical circuit simulator becoming the core for power bipolar devices simulation. The application of the method in modeling power p-i-n Diodes is presented. The results from simulation with SPICE are then compared with known experiments.

Abstract (EN): This paper presents a method for the solution of the Ambipolar Diffusion Equation (ADE) with a Finite Element (FE) approach. The method enables the representation of the base region of power bipolar devices as combination of elementary two port networks with parameters that can vary in time and space. This allows the solution of this equation through an equivalent electrical network. The method can be implemented into any electrical circuit simulator becoming the core for power bipolar devices simulation. The application of the method in modeling power p-i-n Diodes is presented. The results from simulation with SPICE are then compared with known experiments.

Idioma: Português

Tipo (Avaliação Docente): Científica

Nº de páginas: 5