Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputtering

• Tipo: Artigo em Revista Científica Internacional
• Data: 2017

Autores

Guerra, LM (Autor) Outra; Dias, C (Autor) Outra; Pereira, J (Autor) Outra; Lv, H (Autor) Outra; Cardoso, S (Autor) Outra; Freitas, PP (Autor) Outra; ventura, j. (Autor) FCUP

Revista

Título: Journal of Nanoscience and Nanotechnology

Vol. 17

Páginas: 564-567

ISSN: 1533-4880

Editora: American Scientific Publishers

Indexação

ISI Web of Knowledge - 4 Citações

Scopus - 5 Citações

Outras Informações

ID Authenticus: P-00Q-57C

DOI: 10.1166/jnn.2017.12333

Abstract (EN): The recent realization of memristors, nanodevices exhibiting non-volatile resistive switching, has sparked tremendous interest for applications in fields such as nonvolatile memories. Here we report unipolar resistive switching in Pt/MgO/Ta/Ru structures, with an oxide barrier thickness of only 15 nm. No electroforming process was required to achieve resistive switching and an ohmic conduction mechanism is associated with the ON state. We observed an inverse dependence of the ON state resistance on the SET current compliance and average values of 1.61 V and 1.38 V for the SET and RESET voltages, respectively. We show the stability of the switching for over 40 cycles and a clear separation of the ON (10(1) Omega) and OFF (10(2) Omega) states during at least 10(4) s.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4