Spin Transfer on Low Resistance-Area MgO-Based Magnetic Tunnel Junctions Prepared by Ion Beam Deposition

• Tipo: Artigo em Revista Científica Internacional
• Data: 2010

Autores

J. Yang (Autor) Outra; R.J. Macedo (Autor) Outra; M.G. Debs (Autor) Outra; R. Ferreira (Autor) FCUP; S. Cardoso (Autor) FCUP; P.J.P. Freitas (Autor) Outra; J.M. Teixeira (Autor) FCUP; J.O. Ventura (Autor) FCUP

Revista

Título: IEEE Transactions on Magnetics

Vol. 46 Nº 6

Páginas: 2002-2004

ISSN: 0018-9464

Editora: IEEE

Indexação

ISI Web of Science

Classificação Científica

FOS: Ciências exactas e naturais > Física

Outras Informações

Abstract (EN): This work reports spin transfer switching results on nano-sized MgO-based magnetic tunnel junctions (MTJs) prepared by Ion Beam deposition (IBD). Nano-devices with areas down to 60 nm x 180 nm have been successfully nanofabricated. The MgO deposition conditions were optimized aiming at reducing the resistance-area (RA) product, and RA value as low as 0.8 Omega mu m(2) could be successfully obtained for 0.75 nm thick MgO barriers. The average switching current density of 5.45 x 10(6) A/cm(2) can be obtained for a MTJ nanopillar with the dimension of 225 nm x 730.3 nm with low RA of 1.47 Omega mu m(2).

Idioma: Inglês

Tipo (Avaliação Docente): Científica