Ferroelectric polarization and resistive switching characteristics of ion beam assisted sputter deposited BaTiO3 thin films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2016

Autores

Silva, JPB (Autor) Outra; Kamakshi, K (Autor) Outra; Sekhar, KC (Autor) Outra; Agostinho Moreira, JA (Autor) FCUP; Almeida, A (Autor) Outra; Pereira, M (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Journal of Physics and Chemistry of Solids

Vol. 92

Páginas: 7-10

ISSN: 0022-3697

Editora: Elsevier

Indexação

ISI Web of Knowledge - 14 Citações

Scopus - 14 Citações

Outras Informações

ID Authenticus: P-00K-3C6

DOI: 10.1016/j.jpcs.2016.01.012

Abstract (EN): In this work, 150 nm thick polycrystalline BaTiO3 (BTO) films were deposited on Pt/TiO2/SiO2/Si substrate by ion beam assisted sputter deposition technique. The bias voltage dependent resistive switching (RS) and ferroelectric polarization characteristics of Au/BTO/Pt devices are investigated. The devices display the stable bipolar RS characteristics without an initial electroforming process. Fittings to current-voltage (I-V) curves suggest that low and high resistance states are governed, respectively, by filamentary model and trap controlled space charge limited conduction mechanism, where the oxygen vacancies act as traps. Presence of oxygen vacancies is evidenced from the photoluminescence spectrum. The devices also display P-V loops with remnant polarization (P-r) of 5.7 mu C/cm(2) and a coercive electric field (E-c) of 173.0 kV/cm. The coupling between the ferroelectric polarization and RS effect in BTO films is demonstrated.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4