Lattice location of implanted Co in heavily doped (n+)- and (p)+-type silicon

• Tipo: Artigo em Revista Científica Internacional
• Data: 2017

Autores

da Silva, DJ (Autor) Outra; Wahl, U (Autor) Outra; Correia, JG (Autor) Outra; Amorim, LM (Autor) Outra; da Silva, MR (Autor) Outra; da Costa Pereira, LMD (Autor) Outra; araujo, j. p. (Autor) FCUP

Revista

Título: Applied Physics A: Materials Science and Processing

Vol. 123

ISSN: 0947-8396

Editora: Springer Nature

Indexação

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Scopus - 0 Citações

Outras Informações

ID Authenticus: P-00M-MY2

DOI: 10.1007/s00339-017-0870-0

Abstract (EN): We have studied the influence of electronic doping on the preferred lattice sites of implanted Co-61, and the related stabilities against thermal annealing, in silicon. Using the beta(-) emission channeling technique we have identified Co on ideal substitutional (ideal S) sites, sites displaced from bond-centered towards substitutional (nearBC) sites and sites displaced from tetrahedral interstitial towards anti-bonding (near-T) sites. We show clearly that the fractions of Co on these lattice sites change with doping. While near-BC sites prevail in n(+)-type Si, near-T sites are preferred in p(+)-type Si. Less than similar to 35% of Co occupies ideal S sites in both types of heavily doped silicon, showing that the majority of implanted Co forms complex defect structures. Implantation-induced defects seem to getter more efficiently Co in lightly doped n-type than in heavily doped n(+)-or p(+)-type silicon. The formation of CoB pairs in p(+)-type silicon and its possible influence on the lattice sites is discussed.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 8