Direct observation of the lattice sites of implanted manganese in silicon

• Tipo: Artigo em Revista Científica Internacional
• Data: 2016

Autores

da Silva, DJ (Autor) Outra; Wahl, U (Autor) Outra; Correia, JG (Autor) Outra; Amorim, LM (Autor) Outra; Decoster, S (Autor) Outra; da Silva, MR (Autor) Outra; da Costa Pereira, LMD (Autor) Outra; araujo, j. p. (Autor) FCUP

Revista

Título: Applied Physics A: Materials Science and Processing

Vol. 122

ISSN: 0947-8396

Editora: Springer Nature

Indexação

ISI Web of Knowledge - 4 Citações

Scopus - 4 Citações

Outras Informações

ID Authenticus: P-00K-A7B

DOI: 10.1007/s00339-016-9724-4

Abstract (EN): Mn-doped Si has attracted significant interest in the context of dilute magnetic semiconductors. We investigated the lattice location of implanted Mn in silicon of different doping types (n, n(+) and p(+)) in the highly dilute regime. Three different lattice sites were identified by means of emission channeling experiments: ideal substitutional sites; sites displaced from bond-centered toward substitutional sites; and sites displaced from anti-bonding toward tetrahedral interstitial sites. For all doping types investigated, the substitutional fraction remained below similar to 30 %. We discuss the origin of the observed lattice sites as well as the implications of such structures on the understanding of Mn-doped Si systems.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 8