Resistive switching in ferroelectric lead-free 0.5Ba (Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 thin films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2016

Autores

Silva, JPB (Autor) Outra; Kamakshi, K (Autor) Outra; Sekhar, KC (Autor) Outra; Queiros, EC (Autor) Outra; Agostinho Moreira, JA (Autor) FCUP; Almeida, A (Autor) FCUP; Pereira, M (Autor) Outra; Tavares, PB (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Journal of Physics D: Applied Physics

Vol. 49

Página Final: 335301

ISSN: 0022-3727

Editora: Institute of Physics Publishing

Indexação

ISI Web of Knowledge - 19 Citações

Scopus - 19 Citações

Outras Informações

ID Authenticus: P-00K-V4H

DOI: 10.1088/0022-3727/49/33/335301

Abstract (EN): In this work, resistive switching in pulsed laser deposited ferroelectric lead-free 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) thin films was investigated. This study reveals that films grown at 5.5 J cm(-2) have shown optimal ferroelectric and resistive switching response, which are attributed to high tetragonality, large grain size and less defect concentration. Au/0.5BZT-0.5BCT/Pt capacitors show the electroforming free resistive switching that is explained based on the polarization modulation of the Schottky-like barrier at the 0.5BZT-0.5BCT/Au interface. The polarization induced resistive switching is evidenced by its disappearance as the temperature increases to the Curie temperature. The capacitor based on film grown at 5.5 J cm(-2) shows resistive switching characterized by high switching ratio of 10(6) at a low set/reset voltage approximate to 1 V, and by a stable memory window, which are highly required for memory applications.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 9