Light controlled resistive switching and photovoltaic effects in ferroelectric 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 thin films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2017

Autores

Silva, JPB (Autor) Outra; Kamakshi, K (Autor) Outra; Sekhar, KC (Autor) Outra; Novoa, XR (Autor) Outra; Queiros, EC (Autor) Outra; Agostinho Moreira, JA (Autor) FCUP; Almeida, A (Autor) FCUP; Pereira, M (Autor) Outra; Tavares, PB (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Journal of the European Ceramic Society

Vol. 37

Páginas: 583-591

ISSN: 0955-2219

Editora: Elsevier

Indexação

ISI Web of Knowledge - 9 Citações

Scopus - 9 Citações

Outras Informações

ID Authenticus: P-00M-773

DOI: 10.1016/j.jeurceramsoc.2016.09.011

Abstract (EN): In this work, the structural and ferroelectric properties of 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) thin films deposited at different pulse repetition rates were studied. The films deposited at pulse repetition rate of 1 Hz display the optimum values of ferroelectric polarization and dielectric permittivity and are chosen for the investigation of resistive switching and photovoltaic studies. The Pt/0.5BZT-0.5BCT/ITO capacitors show the electroforming free resistive switching (RS) and is explained based on the polarization modulation of the Schottky barrier at the 0.5BZT-0.5BCT/ITO interface. Furthermore, it is shown that the RS ratio and switching voltage can be tuned with white light illumination. The capacitors display photovoltaic effect with the open circuit voltage approximate to 0.8 V and the short circuit current density approximate to 72.6 mu Acm(-2). The photovoltaic efficiency is found to be approximate to 0.010% and is greater than that of other perovskite ferroelectric thin films. The underlying mechanism for enhanced RS and photovoltaic effects is highlighted.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 9