Solid-state diffusion bonding of gamma-TiAl alloys using Ti/Al thin films as interlayers

• Tipo: Artigo em Revista Científica Internacional
• Data: 2006

Autores

Duarte, LI (Autor) Outra; Ramos, AS (Autor) Outra; Vieira, MF (Autor) FEUP; Viana, F (Autor) FEUP; Vieira, MT (Autor) Outra; Kocak, M (Autor) Outra

Revista

Título: Intermetallics

Vol. 14

Páginas: 1151-1156

ISSN: 0966-9795

Editora: Elsevier

Indexação

ISI Web of Knowledge - 57 Citações

ISI Web of Science

Scopus - 76 Citações

Classificação Científica

CORDIS: Ciências Tecnológicas > Engenharia > Engenharia de materiais

FOS: Ciências da engenharia e tecnologias > Engenharia dos materiais

Outras Informações

ID Authenticus: P-004-PZK

DOI: 10.1016/j.intermet.2005.12.011

Abstract (EN): Alternating nanometric layers of titanium and aluminium were used as filler material to promote joining between titanium aluminide samples. The improved diffusivity of these nanometric layers is thought to overcome the difficulties in solid-state joining of titanium aluminides without producing chemical discontinuities at the interface. In this study, a thin multilayer (alternating titanium and aluminium layers), 2 mu m thick, was deposited by dc-magnetron sputtering onto the two surfaces to be joined. The effects of processing conditions and the thickness of nanometric layers on microstructure and chemical composition variation across the interface have been analyzed. Sound regions can be obtained at temperatures as low as 600 degrees C but higher temperatures (800-1000 degrees C) are needed to obtain completely sound joints. During processing, the as-deposited film evolves to a nanocrystalline TiAl layer which may explain why the bond region is slightly harder than the base material.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 6