Scattering by flexural phonons in suspended graphene under back gate induced strain

• Tipo: Artigo em Revista Científica Internacional
• Data: 2012

Autores

Ochoa, H (Autor) Outra; Eduardo V Castro (Autor) Outra; Katsnelson, MI (Autor) Outra; Guinea, F (Autor) Outra

Revista

Título: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Vol. 44

Páginas: 963-966

ISSN: 1386-9477

Indexação

ISI Web of Knowledge - 39 Citações

Scopus - 45 Citações

Outras Informações

ID Authenticus: P-002-C7Y

DOI: 10.1016/j.physe.2011.03.017

Abstract (EN): We have studied electron scattering by out-of-plane (flexural) phonon modes in doped suspended graphene and its effect on charge transport. In the free-standing case (absence of strain) the flexural branch shows a quadratic dispersion relation, which becomes linear at long-wavelengths when the sample is under tension due to the rotational symmetry breaking. In the non-strained case, scattering by flexural phonons is the main limitation to electron mobility. This picture changes drastically when strains above (u) over bar = 10(-4),n(10(12) cm(-2)) are considered. Here we study in particular the case of back gate induced strain, and apply our theoretical findings to recent experiments in suspended graphene.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4