Scattering by flexural phonons in suspended graphene under back gate induced strain

• Type: Article in International Scientific Journal
• Date: 2012

Authors

Ochoa, H (Author) Other; Eduardo V Castro (Author) Other; Katsnelson, MI (Author) Other; Guinea, F (Author) Other

Journal

Title: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Vol. 44

Pages: 963-966

ISSN: 1386-9477

Indexing

ISI Web of Knowledge - 39 Citations

Scopus - 45 Citations

Other information

Authenticus ID: P-002-C7Y

DOI: 10.1016/j.physe.2011.03.017

Abstract (EN): We have studied electron scattering by out-of-plane (flexural) phonon modes in doped suspended graphene and its effect on charge transport. In the free-standing case (absence of strain) the flexural branch shows a quadratic dispersion relation, which becomes linear at long-wavelengths when the sample is under tension due to the rotational symmetry breaking. In the non-strained case, scattering by flexural phonons is the main limitation to electron mobility. This picture changes drastically when strains above (u) over bar = 10(-4),n(10(12) cm(-2)) are considered. Here we study in particular the case of back gate induced strain, and apply our theoretical findings to recent experiments in suspended graphene.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 4