Abstract (EN):
To increase the amount of logic available to the users
in SRAM-based FPGAs, manufacturers are using
nanometric technologies to boost logic density and
reduce costs, making its use more attractive. However,
these technological improvements also make FPGAs
particularly vulnerable to configuration memory bit-flips
caused by power fluctuations, strong electromagnetic
fields and radiation. This issue is particularly sensitive
because of the increasing amount of configuration
memory cells needed to define their functionality.
A short survey of the most recent publications is
presented to support the options assumed during the
definition of a framework for implementing circuits
immune to bit-flips induction mechanisms in memory
cells, based on a customized redundant infrastructure
and on a detection-and-fix controller.
Language:
English
Type (Professor's evaluation):
Scientific
No. of pages:
8
License type: