Lattice position and thermal stability of diluted As in Ge

• Type: Article in International Scientific Journal
• Date: 2012

Authors

decoster, s (Author) Other; wahl, u (Author) Other; cottenier, s (Author) Other; correia, jg (Author) Other; mendonca, t (Author) Other; amorim, lm (Author) Other; pereira, lmc (Author) Other; vantomme, a (Author) Other

Journal

Title: Journal of Applied Physics

Vol. 111

ISSN: 0021-8979

Publisher: American Institute of Physics

Indexing

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Scientific classification

FOS: Natural sciences > Physical sciences

Other information

Authenticus ID: P-002-CEN

DOI: 10.1063/1.3692761

Abstract (EN): We present a lattice location study of the n-type dopant arsenic after ion implantation into germanium. By means of electron emission channeling experiments, we have observed that the implanted As atoms substitute the Ge host atoms and that, in contrast to several implanted metal impurities in Ge, no significant fraction of As is found on interstitial sites. The substitutional As impurities are found to be thermally stable up to 600 degrees C. After 700 degrees C annealing a strong reduction of emission channeling effects was observed, in full accordance with the expected diffusion-induced broadening of the As profile. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692761]

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 7