Asymmetric electromigration-driven resistive switching in tunnel junctions

• Type: Article in International Scientific Journal
• Date: 2008

Authors

ventura, j. (Author) REIT; teixeira, j. m. (Author) Other; araujo, j. p. (Author) FCUP; carpinteiro, f. (Author) Other; sousa, j. b. (Author) FCUP; zhang, z. (Author) Other; liu, y. (Author) Other; freitas, p. p. (Author) Other

Journal

Title: Journal of Non-Crystalline Solids

Vol. 354 No. 2585

Pages: 5272-5274

ISSN: 0022-3093

Publisher: Elsevier

Indexing

ISI Web of Knowledge - 1 Citation

Scopus - 1 Citation

Other information

Authenticus ID: P-003-TK9

DOI: 10.1016/j.jnoncrysol.2008.04.050

Abstract (EN): Devices displaying resistive-switching are being researched as possible candidates for non-volatile Random Access Memories. Here we study resistance (R) switching of non-magnetic origin on CoFe/AlO(x)/CoFe tunnel junctions. We observe R-switching to a low state for negative currents (top to bottom lead) only, here associated with electromigration (EM) of ions from the bottom metallic electrode into the insulator. EM in the reverse sense occurs only for positive current. We thus show the existence of asymmetric electromigration between the two electrode/barrier interfaces, likely reflecting their structural differences.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 3