Three-state memory combining resistive and magnetic switching using tunnel junctions

• Type: Article in International Scientific Journal
• Date: 2007

Authors

ventura, j. (Author) Other; pereira, a. m. (Author) Other; araujo, j. p. (Author) FCUP; sousa, j. b. (Author) FCUP; zhang, z. (Author) Other; liu, y. (Author) Other; freitas, p. p. (Author) Other

Journal

Title: Journal of Physics D: Applied Physics

Vol. 40 No. 12

Pages: 5819-5823

ISSN: 0022-3727

Publisher: Institute of Physics Publishing

Indexing

ISI Web of Knowledge - 18 Citations

Scopus - 18 Citations

Other information

Authenticus ID: P-004-6TW

DOI: 10.1088/0022-3727/40/19/003

Abstract (EN): Magnetic fields generated by current lines are the standard way of switching between resistance ( R) states in magnetic random access memories. A less common but technologically more interesting alternative to achieve R-switching is to use an electrical current crossing the tunnel barrier. Such current induced magnetization switching (CIMS) or current induced switching (CIS) effects were recently observed in thin magnetic tunnel junctions, and attributed to spin transfer ( CIMS) or electromigration of atoms into the insulator (CIS). In this work, electromigration-driven resistance changes (resistive switching) are superimposed with thermally induced pinned layer reversal (magnetic switching), producing a reproducible, three-state memory device. The tunnel junctions under study show a tunnel magnetoresistance of 14% with a RA product of 50 Omega mu m(2). The reversible electromigration-driven resistance changes amount to 7-8% of the full resistance change and more than 10(4) R-switching events can be current induced without significant damage to the tunnel junction. Typical critical current densities are of the order of 2 x 10(6) A cm(-2).

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 5