STRUCTURAL AND ELECTRICAL PROPERTIES OF NANOSTRUCTURED Ba0.8Sr0.2TiO3 FILMS DEPOSITED BY PULSED LASER DEPOSITION

• Type: Article in International Scientific Journal
• Date: 2012

Authors

Silva, JPB (Author) Other; Rodrigues, SAS (Author) Other; Khodorov, A (Author) Other; Martin Sanchez, J (Author) Other; Pereira, M (Author) Other; Alves, E (Author) Other; Gomes, MJM (Author) Other; Colomban, P (Author) Other

Journal

Title: Journal of Nano Research

Vol. 18-19

Pages: 299-306

ISSN: 1662-5250

Publisher: Trans Tech Publications Ltd

Indexing

ISI Web of Knowledge - 1 Citation

Scopus - 1 Citation

Other information

Authenticus ID: P-002-F90

DOI: 10.4028/www.scientific.net/jnanor.18-19.299

Abstract (EN): Barium Strontium Titanate Ba0.8Sr0.2TiO3 (BST) thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique. The X-ray diffraction (XRD) shows that the films crystallize in a perovskite phase. XRD and Atomic Force Microscopy (AFM) characterization reveal that the grains are nano-sized. Rutherford Backscattering Spectrometry (RBS) analysis shows the stoichiometry of the films to be close to the stoichiometry of the target. The Raman spectroscopy shows that the films exhibit the tetragonal structure by the presence of the Raman active modes at 301 cm(-1) and 729 cm(-1), at room temperature. Leakage current measurements of Au/ Ba0.8Sr0.2TiO3/Pt capacitors have been done, at room temperature, to investigate the conduction mechanisms of the films. We found that there are two different conduction regions in the capacitors, namely, an ohmic behavior at low voltages and a Schottky emission mechanism at high voltages. The Schottky barrier height has been estimated to be 0.99 eV.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 8