HfO2-Al2O3 Dielectric Layer for a Performing Metal-Ferroelectric-Insulator-Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 Thin Film (2020)
Article in International Scientific Journal
Silva, JPB; Sekhar, KC; Veltrusk, K; Matolin, V; Negrea, RF; Ghica, C; Oliveira, MJS; Agostinho Moreira, JA; Pereira, M; Gomes, MJM