Finite-element modeling and optimization-based parameter extraction algorithm for NPT-IGBTs

• Type: Article in International Scientific Journal
• Date: 2009

Authors

Rui Chibante (Author) Other; Armando Araujo (Author) FEUP; Adriano Carvalho (Author) FEUP

Journal

Title: IEEE Transactions on Power Electronics

Vol. 24 No. 5

Pages: 1417-1427

ISSN: 0885-8993

Publisher: IEEE

Indexing

ISI Web of Knowledge - 16 Citations

ISI Web of Science

Scopus - 15 Citations

INSPEC

Scientific classification

FOS: Engineering and technology > Electrical engineering, Electronic engineering, Information engineering

CORDIS: Technological sciences > Engineering > Electronic engineering

Other information

Authenticus ID: P-003-KD0

DOI: 10.1109/tpel.2009.2012388

Abstract (EN): A finite-element, physics-based, non-punch-through (NPT) insulated gate bipolar transistor (IGBT) model is presented in this paper. The model's core is based on solving the ambipolar diffusion equation through a variational formulation, resulting in a system of ordinary differential equations (ODEs). The approach enables an easy implementation into a standard SPICE circuit simulator. The resulting system of ODES is solved as a set of (current controlled) RC nets describing charge carrier distribution in a low-doped zone. Other zones of the device are modeled with classical methods. This hybrid approach describes the device's dynamic and static behavior with good accuracy while maintaining low execution times. As physics-based models need a significant number of parameters, an automatic parameter extraction method has been developed. The procedure, based on an optimization algorithm (simulated annealing), enables an efficient extraction of parameters requiring some simple device waveform measurements. Experimental validation is performed. Results prove the usefulness of the proposed methodology for the efficient design of power circuits through simulation.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 11