A FEM punch-through IGBT model using an efficient parameter extraction method

• Type: Article in International Conference Proceedings Book
• Date: 2005

Authors

Rui Chibante (Author) Other; Armando Araújo (Author) FEUP; Adriano Carvalho (Author) FEUP

Conference proceedings International

Title: IECON 2005: THIRTY-FIRST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-3

Pages: 679-684

31st Annual Conference of the IEEE-Industrial-Electronics-Society

Raleigh, NC, NOV 06-10, 2005-2006

Indexing

ISI Web of Knowledge - 0 Citations

Scopus - 2 Citations

INSPEC

Scientific classification

FOS: Engineering and technology > Electrical engineering, Electronic engineering, Information engineering

CORDIS: Technological sciences > Engineering > Electrical engineering

Other information

Authenticus ID: P-000-5W9

DOI: 10.1109/iecon.2005.1568986

Abstract (EN): A Finite Element physics-based punch-through IGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6