Modeling Bipolar Power Semiconductors. Proceedings of the 1st Online Symposium for Electronics Engineers, October 2000 to March 2001.

• Type: Article in International Scientific Journal
• Date: 2000

Authors

Armando Araújo (Author) FEUP

Journal

Title: Journal of Systemics, Cybernetics and Informatics

Vol. 6 No. 4

ISSN: 1690-4524 (Online)

Other information

Abstract (EN): This paper introduces a new method for modeling of bipolar power semiconductors-BPS. The core of the method is based on a variational formulation of the ambipolar diffusion equation-ADE with an approximation to the solution with the finite element method-FEM. This approach enables solution of the ADE as a set of ordinary differential equations-ODEs, which gives an accurate description of hole/electron distribution effects in lightly doped zones. This set of ODEs is solved trough an electrical circuit analogy enabling calculus of the distributed resistance and charge storage in any general circuit simulator. Other zones of the devices are described trough known analytical approaches as electrical subcircuits. Models for BPS are made adding the various subcircuits trough boundary conditions of different zones.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 16