Resistive switching in MoSe2/BaTiO3 hybrid structures

• Type: Article in International Scientific Journal
• Date: 2017

Authors

Silva, JPB (Author) Other; Almeida Marques, CA (Author) Other; Agostinho Moreira, JA (Author) FCUP; Conde, O (Author) Other

Journal

Title: Journal of Materials Chemistry C

Vol. 5

ISSN: 2050-7526

Publisher: Royal Society of Chemistry

Indexing

ISI Web of Knowledge - 22 Citations

Scopus - 22 Citations

Other information

Authenticus ID: P-00N-503

DOI: 10.1039/c7tc03024j

Abstract (EN): Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO3 (BTO) and few-layer MoSe2 are combined in a single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiOx/BTO/Au and Al/Si/SiOx/MoSe2/BTO/Au structures and the high quality of the SiOx/MoSe2 interface in the Al/Si/SiOx/MoSe2/Au structure. Al/Si/SiOx/MoSe2/BTO/Au hybrid structures show electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe2/BTO interface via ferroelectric polarization flipping. This structure shows promising resistive switching characteristics with a switching ratio of approximate to 10(2) and a stable memory window, which are highly required for memory applications.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 7