Effect of pressure on the magnetism of bilayer graphene

• Type: Article in International Scientific Journal
• Date: 2011

Authors

Eduardo V Castro (Author) Other; Lopez Sancho, MP (Author) Other; Vozmediano, MAH (Author) Other

Journal

Title: Physical Review B

Vol. 84

ISSN: 2469-9950

Publisher: American Physical Society

Indexing

ISI Web of Knowledge - 13 Citations

Scopus - 16 Citations

Other information

Authenticus ID: P-002-NSM

DOI: 10.1103/physrevb.84.075432

Abstract (EN): We study the effect of pressure on the localized magnetic moments induced by vacancies in bilayer graphene in the presence of topological defects breaking the bipartite nature of the lattice. By using a mean-field Hubbard model, we address the two inequivalent types of vacancies that appear in the Bernal stacking bilayer graphene. We find that by applying pressure in the direction perpendicular to the layers the critical value of the Hubbard interaction needed to polarize the system decreases. When combined with an external electric field applied perpendicularly to bilayer graphene the effect becomes sizable and can be detected experimentally. The effect is particularly enhanced for one type of vacancies, and admits straightforward generalization to multilayer graphene in Bernal stacking and graphite. The results clearly demonstrate that the magnetic behavior of multilayer graphene can be affected by mechanical transverse deformation.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6