Impact of Thermal Variations on the Fatigue and Fracture of Bi-Material Interfaces (Polyimide-EMC, Polyimide-SiO2, and Silicon-EMC) Found in Microchips

• Tipo: Artigo em Revista Científica Internacional
• Data: 2025

Autores

Videira, PFC (Autor) Outra; Ferreira, RA (Autor) Outra; Maleki, P (Autor) Outra; Akhavan-Safar, A (Autor) Outra; Carbas, RJC (Autor) Outra; Marques, EAS (Autor) Outra; Karunamurthy, B (Autor) Outra; da Silva, LFM (Autor) FEUP

Revista

Título: Polymers

Vol. 17

Página Final: 520

Editora: MDPI

Indexação

ISI Web of Knowledge - 0 Citações

Scopus - 0 Citações

Outras Informações

ID Authenticus: P-018-4TP

DOI: 10.3390/polym17040520

Abstract (EN): As the trend towards the densification of integrated circuit (IC) devices continues, the complexity of interfaces involving dissimilar materials and thermo-mechanical interactions has increased. Highly integrated systems in packages now comprise numerous thin layers made from various materials. The interfaces between these different materials represent a vulnerable point in ICs due to imperfect adhesion and stress concentrations caused by mismatches in thermo-mechanical properties such as Young's modulus, coefficients of thermal expansion (CTE), and hygro-swelling-induced expansion. This study investigates the impact of thermal variations on the fracture behavior of three bi-material interfaces used in semiconductor packaging: epoxy molding compound-silicon (EMC-Si), silicon oxide-polyimide (SiO2-PI), and PI-EMC. Using double cantilever beam (DCB) tests, we analyzed these interfaces under mode I loading at three temperatures: -20 degrees C, 23 degrees C, and 100 degrees C, under both quasi-static and cyclic loading conditions. This provided a comprehensive analysis of the thermal effects across all temperature ranges in microelectronics. The results show that temperature significantly alters the failure mechanism. For SiO2-PI, the weakest point shifts from silicon at low temperatures to the interface at higher temperatures due to thermal stress redistribution. Additionally, the fracture energy of the EMC-Si interface was found to be highly temperature-dependent, with values ranging from 0.136 N/mm at low temperatures to 0.38 N/mm at high temperatures. SiO2-PI's fracture energy at high temperature was 42% less than that of EMC-Si. The PI-EMC interface exhibited nearly double the crack growth rate compared to EMC-Si. The findings of this study provide valuable insights into the fracture behavior of bi-material interfaces, offering practical applications for improving the reliability and design of semiconductor devices, especially in chip packaging.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 24