Tight-binding approach to uniaxial strain in graphene

• Tipo: Artigo em Revista Científica Internacional
• Data: 2009

Autores

Pereira, VM (Autor) Outra; Castro Neto, AH (Autor) Outra; Peres, NMR (Autor) Outra

Revista

Título: Physical Review B - Condensed Matter and Materials Physics

Vol. 80

ISSN: 1098-0121

Editora: American Physical Society

Indexação

ISI Web of Knowledge - 1028 Citações

Scopus - 1093 Citações

Outras Informações

ID Authenticus: P-003-J0S

DOI: 10.1103/physrevb.80.045401

Abstract (EN): We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk spectral gap. However, this gap is critical, requiring threshold deformations in excess of 20% and only along preferred directions with respect to the underlying lattice. The gapless Dirac spectrum is robust for small and moderate deformations and the gap appears as a consequence of the merging of the two inequivalent Dirac points only under considerable deformations of the lattice. We discuss how strain-induced anisotropy and local deformations can be used as a means to affect transport characteristics and pinch off current flow in graphene devices.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 8