Investigation of photoelectrical properties of CdSe nanocrystals embedded in a SiO(2) matrix

• Tipo: Artigo em Revista Científica Internacional
• Data: 2008

Autores

Kafadaryan, EA (Autor) Outra; Levichev, S (Autor) Outra; Pinto, SRC (Autor) Outra; Aghamalyan, NR (Autor) Outra; Hovsepyan, RK (Autor) Outra; Badalyan, GR (Autor) Outra; Chahboun, A (Autor) Outra; Rolo, AG (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Semiconductor Science and Technology

Vol. 23

ISSN: 0268-1242

Editora: Institute of Physics Publishing

Indexação

ISI Web of Knowledge - 6 Citações

Scopus - 6 Citações

Outras Informações

ID Authenticus: P-003-WVE

DOI: 10.1088/0268-1242/23/9/095025

Abstract (EN): CdSe nanocrystals (NCs) embedded in SiO(2) thin films were prepared using RF-magnetron co-sputtering. The average NC size was estimated to be 18 nm. The dark and photocurrent temporal dependences have been measured as a function of the magnitude of applied voltage (50-150 V). Annealing the samples seems to improve the photoconductivity (similar to 10(-12) Omega(-1)) that increases with the film thickness and slightly changes under the bias voltage. Furthermore, the photovoltage measurements showed that a concentration of CdSe in the range of 27 mol% leads to the generation of a photovoltaic signal up to 5 V at 400 mu W cm(-2). These results demonstrate the potential of silica films with embedded CdSe NCs for photovoltaic applications.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 5