Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

• Tipo: Artigo em Revista Científica Internacional
• Data: 2012

Autores

Pinto, SRC (Autor) Outra; Buljan, M (Autor) Outra; Chahboun, A (Autor) Outra; Roldan, MA (Autor) Outra; Bernstorff, S (Autor) Outra; Varela, M (Autor) Outra; Pennycook, SJ (Autor) Outra; Barradas, NP (Autor) Outra; Alves, E (Autor) Outra; Molina, SI (Autor) Outra; Ramos, MMD (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Journal of Applied Physics

Vol. 111

ISSN: 0021-8979

Editora: American Institute of Physics

Indexação

ISI Web of Knowledge - 2 Citações

Scopus - 4 Citações

Outras Informações

ID Authenticus: P-002-B9Z

DOI: 10.1063/1.3702776

Abstract (EN): In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO2)/SiO2 multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge+SiO2) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702776]

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 6