Estimation of Ge nanocrystals size by Raman, X-rays, and HRTEM techniques

• Tipo: Outra Publicação em Revista Científica Internacional
• Data: 2008

Autores

Pinto, SRC (Autor) Outra; Caldelas, P (Autor) Outra; Rolo, AG (Autor) Outra; Chahboun, A (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Microscopy and Microanalysis

Vol. 14 Nº S3

Páginas: 61-64

ISSN: 1431-9276

Editora: Cambridge University Press

Indexação

ISI Web of Knowledge - 5 Citações

Scopus - 6 Citações

Outras Informações

ID Authenticus: P-003-WPS

DOI: 10.1017/s1431927608089393

Abstract (EN): Ge NCs have attracted considerable attention because of their potential applications in nonvolatile memory and integrated optoelectronics. A number of groups have already proposed integrate flash memories based on Ge NCs embedded SiO2 matrix. Since Al2O3 presents a high dielectric constant comparatively to SiO2, it is a good candidate to replace silica in flash memory systems, and therefore improve their performances. Moreover, Al2O3 presents good mechanical properties, and supports high temperature, which leads it to be an ideal material for Si processing conditions. However, a few studies have been reported on Ge NCs embedded in Al2O3 matrix. © 2008 Microscopy Society of America.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 4