Microstructure and photoluminescence of CdS-doped silica films grown by RF magnetron sputtering

• Tipo: Artigo em Revista Científica Internacional
• Data: 2002

Autores

Rolo, AG (Autor) Outra; Stepikhova, MV (Autor) Outra; Filonovich, SA (Autor) Outra; Ricolleau, C (Autor) Outra; Vasilevskiy, MI (Autor) Outra; Gomes, MJM (Autor) Outra

Revista

Título: Physica Status Solidi (B): Basic Research

Vol. 232

Páginas: 44-49

ISSN: 0370-1972

Editora: Wiley-Blackwell

Indexação

ISI Web of Knowledge - 5 Citações

Scopus - 6 Citações

Outras Informações

ID Authenticus: P-000-NXJ

DOI: 10.1002/1521-3951(200207)232:1<44::aid-pssb44>3.0.co;2-4

Abstract (EN): Silica films containing CdS nanometer-sized particles with semiconductor contents of 1-10% were produced by radio-frequency magnetron sputtering at room temperature with subsequent annealing. The mean diameter of the CdS nanocrystals (NCs) varied between 4 and 6 nm, with narrow size distribution. High-resolution transmission electron microscopy images obtained for low-semi conductor-fraction samples showed quite a homogeneous NC distribution inside the silica matrix while the high-concentration samples showed an agglomeration of NCs in a columnar structure The observed photoluminescence (PL) bands were correlated with the semiconductor concentration. Two intense PL bands, one near the band-gap energy and the other in the red, were ob served at low temperature for samples with low CdS fraction. The high-energy band was found to be Stokes shifted by some 200 meV with respect to the absorption edge at room temperature. Th samples with high CdS fraction only displayed a broad red emission band, which was attributed to interface states.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 6