Growth and properties of Pb(Zr0.92Ti0.08)O-3 thin films

• Tipo: Artigo em Revista Científica Internacional
• Data: 2004

Autores

Boerasu, I (Autor) Outra; Pintilie, L (Autor) Outra; Gomes, MJM (Autor) Outra; Pereira, M (Autor) Outra

Revista

Título: Integrated Ferroelectrics

Vol. 62

Páginas: 83-87

ISSN: 1058-4587

Editora: Taylor & Francis

Indexação

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Outras Informações

ID Authenticus: P-000-CYT

DOI: 10.1080/10584580490460556

Abstract (EN): Lead zirconate-titanate (PZT) thin films with Zr/Ti ratio of 92/8 were deposited by sol-gel on Pt(111)-coated Si(100) and single crystal MgO(100) substrates. The films crystallize differently on the two type of substrates: in case of the films deposited on Pt the perovskite structure is established only after oxygen annealing, while for the films deposited on MgO annealing in air is enough. The films are polycrystalline with some preferred orientation that is substrate dependent. Average values of 2.1 muC/cm(2) and 78 kV/cm were obtained for remnant polarization and coercive field, respectively. The I-V characteristic at low to medium voltages is dominated by field enhanced Schottky emission, with Ln(J)similar to(V + V-bi)(1/4) dependence of the current density. A value of about 3.85 eV was estimated for the band-gap from optical measurements.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 5