Compensation of Temperature Effects on the Pull-In Voltage of Microstructures

• Tipo: Artigo em Revista Científica Internacional
• Data: 2004

Autores

Luis A. Rocha (Autor) FEUP; E. Cretu (Autor) Outra; R. F. Wolffenbuttel (Autor) Outra

Revista

Título: Sensors and Actuators, A: Physical

Vol. 115

Páginas: 351-356

ISSN: 0924-4247

Editora: Elsevier

Outras Informações

DOI: 10.1016/j.sna.2004.03.075

Abstract (EN): The pull-in voltage of a suspended microstructure has been investigated for use as on-chip voltage reference in a compatible MEMS-IC process. Pull-in is detected using capacitive displacement measurement. The stability is affected by an initial parasitic charge build-up and a temperature sensitivity of -149 muV/K. A burn-in procedure is required to minimize the first effect. The temperature coefficient is compensated for by applying additional temperature dependent electrostatic energy to the micro structure. Devices fabricated in an epi-poly process and designed for a nominal pull-in voltage at 5 V have a measured value at 4.7424 V Drift becomes negligible after 120 h of operation. The temperature reproducibility is within the resolution of the readout at 100 muV over a temperature range between 20 and 60 degreesC. (C) 2004 Elsevier B.V. All rights reserved.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 6