Design of a High Efficiency GaN-HEMT RF Power Amplifier

• Tipo: Artigo em Livro de Atas de Conferência Internacional
• Data: 2015

Autores

Gaddam, NK (Autor) Outra; José Machado da Silva (Autor) FEUP

Ata de Conferência Internacional

Título: 2015 Conference on Design of Circuits and Integrated Systems, DCIS 2015

Conference on Design of Circuits and Integrated Systems, DCIS 2015

25 November 2015 through 27 November 2015

Indexação

ISI Web of Knowledge - 0 Citações

Scopus - 0 Citações

Outras Informações

ID Authenticus: P-00K-ARN

DOI: 10.1109/dcis.2015.7388610

Abstract (EN): This paper presents the design and implementation of a GaN-HEMT, class-J power amplifier suitable for cognitive radio transceivers, i.e., which presents high-efficiency and wideband characteristics, being these maintained for large load variations. Simulation results are presented which show large-signal measurement results of 30 dB gain with 60%-76% power-added efficiency (PAE) over a band of 1.3-2.3 GHz. Adaptivity to load changes is being developed to ensure PAE above 70% for large load variations.

Idioma: Inglês

Tipo (Avaliação Docente): Científica

Nº de páginas: 6