Design of a High Efficiency GaN-HEMT RF Power Amplifier

• Type: Article in International Conference Proceedings Book
• Date: 2015

Authors

Gaddam, NK (Author) Other; José Machado da Silva (Author) FEUP

Conference proceedings International

Title: 2015 Conference on Design of Circuits and Integrated Systems, DCIS 2015

Conference on Design of Circuits and Integrated Systems, DCIS 2015

25 November 2015 through 27 November 2015

Indexing

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Other information

Authenticus ID: P-00K-ARN

DOI: 10.1109/dcis.2015.7388610

Abstract (EN): This paper presents the design and implementation of a GaN-HEMT, class-J power amplifier suitable for cognitive radio transceivers, i.e., which presents high-efficiency and wideband characteristics, being these maintained for large load variations. Simulation results are presented which show large-signal measurement results of 30 dB gain with 60%-76% power-added efficiency (PAE) over a band of 1.3-2.3 GHz. Adaptivity to load changes is being developed to ensure PAE above 70% for large load variations.

Language: English

Type (Professor's evaluation): Scientific

No. of pages: 6